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Applied Physics Letters : Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection

By Man Chang, Minseok Jo, Seonghyun Kim, Yongkyu Ju, Seungjae Jung et al

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Book Id: WPLBN0002169216
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 11 December 2008

Title: Applied Physics Letters : Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection  
Author: Man Chang, Minseok Jo, Seonghyun Kim, Yongkyu Ju, Seungjae Jung et al
Volume: Issue : December 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection, Applied Physics Letters Collection
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Publication Date:
Publisher: American Institute of Physics

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Minseok Jo, Seonghyun Kim, Yongkyu Ju, Seungjae Jung Et A, M. C. (n.d.). Applied Physics Letters : Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection. Retrieved from http://nationalpubliclibrary.info/


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Description: We found that the charge loss behavior of metal-alumina-nitride-oxide-silicon-type flash memory was highly dependent on the amount of injected charge (Qinj). Beyond the critical level of Qinj, the direction of the dominant charge loss changed from pointing toward SiO2 to pointing toward Al2O3. The highly injected charges could cause the band bending of Al2O3, which reduced the tunneling distance across Al2O3 with the low conduction band offset. These results were verified by experimental results and theoretical device modeling through a comparison of the charge loss rate and the tunneling rate between a SiO2/Si3N4/SiO2 stack and a SiO2/Si3N4/Al2O3 stack.

 

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