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Journal of Applied Physics : The role of implantation-induced point defects for the redistribution of oxygen in silicon at high-temperature processing

By R. Kögler, X. Ou, W. Skorupa, and W. Möller

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Book Id: WPLBN0002169342
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 17 November 2008

Title: Journal of Applied Physics : The role of implantation-induced point defects for the redistribution of oxygen in silicon at high-temperature processing  
Author: R. Kögler, X. Ou, W. Skorupa, and W. Möller
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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X. Ou, W. Skorupa, And W. Mölle, R. K. (n.d.). Journal of Applied Physics : The role of implantation-induced point defects for the redistribution of oxygen in silicon at high-temperature processing. Retrieved from http://nationalpubliclibrary.info/


Description
Description: The excess of implantation-induced point defects controls the oxygen redistribution in silicon during a high-temperature treatment, such as in separation-by-implanted-oxygen, and defines the energy-dose window for the formation of a perfect homogeneous and planar buried oxide layer. Quantitative relations are given between the distribution of the initially generated excess defects and the finally formed oxide layer. Implantation-induced defects also explain the depth positions of different oxide precipitate layers and of silicon islands inside the oxide layer. Other defects as, e.g., dislocations, which form during thermal treatment, may relocate the energy-dose window toward a lower oxygen dose.

 

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