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Journal of Applied Physics : Low Schottky barrier height for ErSi2-x/n-Si contacts formed with a Ti cap

By Nicolas Reckinger, Xiaohui Tang, Vincent Bayot, Dmitri A. Yarekha, Emmanuel Dubois et al

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Book Id: WPLBN0002169363
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 19 November 2008

Title: Journal of Applied Physics : Low Schottky barrier height for ErSi2-x/n-Si contacts formed with a Ti cap  
Author: Nicolas Reckinger, Xiaohui Tang, Vincent Bayot, Dmitri A. Yarekha, Emmanuel Dubois et al
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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Xiaohui Tang, Vincent Bayot, Dmitri A. Yarekha, Emmanuel Dubois Et A, N. R. (n.d.). Journal of Applied Physics : Low Schottky barrier height for ErSi2-x/n-Si contacts formed with a Ti cap. Retrieved from http://nationalpubliclibrary.info/


Description
Description: In this paper, the formation of Er disilicide (ErSi2−x) with a Ti cap on low doping n-type Si(100) is investigated. After deposition in ultrahigh vacuum, the solid-state reaction between Er and Si is performed ex situ by rapid thermal annealing between 450 and 600 °C in a forming gas ambience with a 10 nm thick Ti capping layer to protect Er from oxidation. X-ray diffraction analyses have confirmed the formation of ErSi2−x for all annealing temperatures. The formed films are found to be free of pinholes or pits and present a sharp and smooth interface with the Si bulk substrate. The extracted Schottky barrier height (SBH) corresponds to the state-of-the-art value of 0.28 eV if the annealing temperature is lower than or equal to 500 °C. This result demonstrates the possibility to form low SBH ErSi2−x/n-Si contacts with a protective Ti cap. However, when the annealing temperature is set to a higher value, the SBH concomitantly rises. Based on our experiments, this SBH increase can be mainly related to an enhanced diffusion of oxygen through the stack during the annealing, which degrades the quality of the ErSi2−x film.

 

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