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Journal of Applied Physics : The effect of SiO2 addition and measurement temperature on the high-field electrical behavior of BaTiO3-based positive temperature coefficient thermistors

By M. A. Zubair and C. Leach

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Book Id: WPLBN0002169391
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 19 November 2008

Title: Journal of Applied Physics : The effect of SiO2 addition and measurement temperature on the high-field electrical behavior of BaTiO3-based positive temperature coefficient thermistors  
Author: M. A. Zubair and C. Leach
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection, Journal of Applied Physics Collection
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Publisher: American Institute of Physics

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Zubair And C. Leac, M. A. (n.d.). Journal of Applied Physics : The effect of SiO2 addition and measurement temperature on the high-field electrical behavior of BaTiO3-based positive temperature coefficient thermistors. Retrieved from http://nationalpubliclibrary.info/


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Description: The effects of SiO2 addition, in the range 0–3 at. %, on the high field electrical characteristics of positive temperature coefficient of resistance (PTC) thermistors have been characterized at several temperatures above the ferroelectric transition temperature TC. It was found that decreases in SiO2 content and increases in measurement temperature both decreased the field dependency of the current-voltage response. The electrical data were analyzed in terms of existing current-flow models and found to exhibit reasonable agreement only with the model based on diffusion limited transport across a double Schottky barrier. The maximum value of voltage drop per grain boundary for fit to the diffusion limited model Vmax increased with increasing measurement temperature within the PTC region, but leveled off beyond the temperature of maximum resistance. This behavior directly parallels the variation of electrostatic barrier height with temperature. A reduction in Vmax with increasing SiO2 content was observed and attributed to a concomitant reduction in electrostatic barrier height.

 

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