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Journal of Applied Physics : Hopping conduction and low-frequency dielectric relaxation in 5mol% Mn doped (Pb,Sr)TiO3 films

By J. Yang, X. J. Meng, M. R. Shen, L. Fang, J. L. Wang et al

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Book Id: WPLBN0002169430
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 21 November 2008

Title: Journal of Applied Physics : Hopping conduction and low-frequency dielectric relaxation in 5mol% Mn doped (Pb,Sr)TiO3 films  
Author: J. Yang, X. J. Meng, M. R. Shen, L. Fang, J. L. Wang et al
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection, Journal of Applied Physics Collection
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Publication Date:
Publisher: American Institute of Physics

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X. J. Meng, M. R. Shen, L. Fang, J. L. Wang Et A, J. Y. (n.d.). Journal of Applied Physics : Hopping conduction and low-frequency dielectric relaxation in 5mol% Mn doped (Pb,Sr)TiO3 films. Retrieved from http://nationalpubliclibrary.info/


Description
Description: The highly (00l)-oriented 5 mol % Mn doped Pb0.5Sr0.5TiO3 films with remarkable ferroelectric properties (2Pr = 27.1 μC/cm2 and 2Ec = 55.5 kV/cm) were fabricated on LaNiO3 coated silicon substrates by chemical solution deposition. The ac conductivity and the dielectric response of the films at various temperatures were studied. Hopping conduction accompanied by the dielectric relaxation at low frequencies was observed. The results can be correlated with the thermal-activated short range hopping of localized charge carriers through trap sites separated by potential barriers with different heights, i.e., localized electrons hopping between multivalence Mn sites (the activation energy of this hopping process is ∼ 0.4 eV), which is also established in terms of the correlated barrier hopping model.

 

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